Universal Crossover between Efros-Shklovskii and Mott Variable-Range-Hopping Regimes.
نویسنده
چکیده
A universal scaling function, describing the crossover between the Mott and the Efros-Shklovskii hopping regimes, is derived, using the percolation picture of transport in strongly localized systems. This function is agrees very well with experimental data. Quantitative comparison with experiment allows for the possible determination of the role played by polarons in the transport. 72.20.-i, 71.55.Jw, 05.60+w, 71.38+i Typeset using REVTEX 1 Electronic interactions are known to play an important role in the strongly localized regime. More than two decades ago, Pollak [1], and Efros and Shklovskii [2] pointed out that the long-range nature of the interactions leads to a dip in the single-particle density of states, ρ(ǫ), at the Fermi energy. Using a constraint on the single-particle excitations, Efros and Shklovskii [2] argued that this soft gap is of the form ρ(ǫ) ∼ ǫ, where ǫ is the energy measured from the Fermi energy and d the space dimension. The gap in the density of states was indeed observed by tunneling [3,4] and photoemission [5] measurements. Moreover, it modifies the Mott variable-range hopping law, logR ∼ 1/T , from x = d + 1 to x = 1/2. The modified exponent has been observed in many experiments [6]. The Efros-Shklovskii hopping law is expected to be relevant at low temperatures (compared to the size of the gap) [2,7], and in the last few years there have been a multitude of experiments aimed at exploring the crossover between the Mott to the Efros-Shklovskii hopping regimes as a function of temperature [8]. A significant step was taken more recently, when Aharony and coworkers [9,10] have argued that this crossover is described by a universal scaling function, and obtained this scaling function phenomenologically, using energy additivity. It is the aim of this paper to demonstrate that the “microscopic” percolation picture [11], describing the transport in the strongly localized regime, indeed leads to such a universal crossover function, and to derive an equation for this function. The results agree excellently with existing experimental data [4], and allow quantitative comparison between features in the density of the states and the transport data, taken on the same physical system. The starting point of this calculation is the mapping of the resistance problem into a percolation criterion [11] of an equivalent random resistor network [12], consisting of randomly placed sites. Without interactions, the activation energy from site i to site j is given by ǫj−ǫi, where ǫi are the energy of site i, which in this case is distributed uniformly. The resistance between each pair of sites is given by [12] Rij = exp {(|ǫi|+ |ǫj |+ |ǫi − ǫj |)|/2T + 2rij/ξ}, where all resistances are measured in some unit of resistance. Since the resistances vary exponentially, the overall resistance will be determined by the weakest link, which is the largest 2 resistance, R, such that the cluster formed by all resistances (bonds), satisfying R > Rij, percolates. Clearly, all states participating in the percolating network (defined as occupied sites) must satisfy R > exp(|ǫi|/2T ). Following [11], the percolation criterion employed here is the following [13] — given such an occupied site , the number of bonds attached to it has to be higher than a critical threshold, Zc, for the system to percolate, Zc = 1 2 ∫ T log R −T log R ρ0dǫ ∫ 2T logR −2T logR ρ0 dǫ1 ∫
منابع مشابه
Crossover of Conduction Mechanism in Sr 2 Iro 4 Epitaxial Thin Films
High quality epitaxial Sr2IrO4 thin films with various thicknesses (9-300 nm) have been grown on SrTiO3 (001) substrates, and their electric transport properties have been investigated. All samples showed the expected insulating behavior with a strong resistivity dependence on film thickness, that can be as large as three orders of magnitude at low temperature. A close examination of the transp...
متن کاملTuning the electronic transport properties of grapheme through functionalisation with fluorine
We demonstrate the possibility to tune the electronic transport properties of graphene mono-layers and multi-layers by functionalisation with fluorine. For mono-layer samples, with increasing the fluorine content, we observe a transition from electronic transport through Mott variable range hopping (VRH) in two dimensions to Efros-Shklovskii VRH. Multi-layer fluorinated graphene with high conce...
متن کاملComment on "Electronic correlation effects and the Coulomb gap at finite temperature".
We have investigated the effect of the long-range Coulomb interaction on the one-particle excitation spectrum of n-type germanium, using tunneling spectroscopy on mechanically controllable break junctions. At low temperatures, the tunnel conductance shows a minimum at zero bias voltage due to the Coulomb gap. Above 1 K, the gap is filled by thermal excitations. This behavior is reflected in the...
متن کاملHopping Conductivity in Single Crystals (Cd0.6Zn0.32Mn0.08)3As2 (RESEARCH NOTE)
The growth processes of Tetragonal single crystals of solid solution (Cd0.6Zn0.32Mn0.08)3As2, space group P42/nmc, has been synthesized by Bridgman method. Conductivity and magnetoresistance of (Cd0.6Zn0.32Mn0.08)3As2 were measured in the range 1.6K to 300K and in magnetic field up to 25 T. Crossover from Mott variable-range-hopping conductivity mechanism close to helium temperatures. In this w...
متن کاملMAGNETORESISTANCE AND HOPPING CONDUCTIVITY IN LaMnO3+δ
Resistivity, ρ (T), of LaMnO3+δ displays between δ = 0 − 0.154 an activated behavior both above and below the paramagnetic (PM) to ferromagnetic transition temperature, TC. The relative magnetoresistance at 8 T reaches the values of – 88 % near TC and – 98 % at T ≈ 20 K. In the PM phase ρ (T) satisfies between TC ~130 − 160 K and Tv ∼ 250 − 270 K the Shklovskii – Efros-like variable-range hoppi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Physical review letters
دوره 77 26 شماره
صفحات -
تاریخ انتشار 1996